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dc.contributor.authorHuang, Yi-Chiaen_US
dc.contributor.authorLin, June-Huaen_US
dc.contributor.authorTseng, I-Hsiangen_US
dc.contributor.authorLo, An-Yaen_US
dc.contributor.authorLo, Teng-Yuanen_US
dc.contributor.authorYu, Hsin-Peien_US
dc.contributor.authorTsai, Mei-Huien_US
dc.contributor.authorWhang, Wha-Tzongen_US
dc.contributor.authorHsu, Ken-Yuhen_US
dc.date.accessioned2014-12-08T15:32:56Z-
dc.date.available2014-12-08T15:32:56Z-
dc.date.issued2013-10-18en_US
dc.identifier.issn0266-3538en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.compscitech.2013.08.008en_US
dc.identifier.urihttp://hdl.handle.net/11536/22973-
dc.description.abstractWe present a valuable in situ fabrication process for synthesizing high electrical conductive polyimide/multiwalled carbon nanotube (PI/MWCNT) composite films. The success of this process was achieved the addition of 2,6-diaminoanthraquinone (DAAQ). The DAAQ is not only an excellent dispersion agent to stably disperse pristine MWCNTs in solvent but also a monomer to directly synthesize PI. The strong interaction between DAAQ with MWCNT was verified by FTIR, UV-Vis, Raman, and fluorescence spectra. The highest value of electrical conductivity of 55.6 S/cm are achieved by the PI composite containing 40 wt.% of MWCNT. Moreover, the electrical conductivity of this film further enhanced to 106 S/cm after the thermal compression process. The MWCNT content at the percolation threshold of conductivity is 0.50 wt.% (or 0.32 vol.%) and the critical exponent is equal to 2.52. The developed in situ fabrication process through DAAQ-derived molecules can also be applied to synthesize other polymers requiring diamine structure. (C) 2013 Published by Elsevier Ltd.en_US
dc.language.isoen_USen_US
dc.subjectCarbon nanotubesen_US
dc.subjectNano compositesen_US
dc.subjectPolymer-matrix composites (PMCs)en_US
dc.subjectPolyimideen_US
dc.titleAn in situ fabrication process for highly electrical conductive polyimide/MWCNT composite films using 2,6-diaminoanthraquinoneen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.compscitech.2013.08.008en_US
dc.identifier.journalCOMPOSITES SCIENCE AND TECHNOLOGYen_US
dc.citation.volume87en_US
dc.citation.issueen_US
dc.citation.spage174en_US
dc.citation.epage181en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000326134000025-
dc.citation.woscount3-
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