標題: | Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors |
作者: | Wong, Yuen-Yee Chen, Yu-Kong Maa, Jer-Shen Yu, Hung-Wei Tu, Yung-Yi Dee, Chang-Fu Yap, Chi-Chin Chang, Edward Yi 材料科學與工程學系 照明與能源光電研究所 電子工程學系及電子研究所 Department of Materials Science and Engineering Institute of Lighting and Energy Photonics Department of Electronics Engineering and Institute of Electronics |
公開日期: | 7-Oct-2013 |
摘要: | Ti/Al/Ni/Cu ohmic contact for AlGaN/GaN structure has been fabricated. The Ni layer played an important role in achieving low specific contact resistance (r(c)), smooth morphology, and excellent edge acuity. With a 50-angstrom Ni layer, a r(c) of 1.35 x 10(-6) Omega-cm(2) and a root-mean-square roughness of 7.65 nm have been realized. The characterization results indicated that no evidence of Cu diffusion into the semiconductor layers. The formation of Al-Cu and Ti-Cu alloys might have confined the Cu within the ohmic metal. In the absence of gold, the surface roughening caused by Au-Al alloy in conventional Ti/Al/Ni/Au structure was also prevented. (C) 2013 AIP Publishing LLC. |
URI: | http://dx.doi.org/10.1063/1.4824894 http://hdl.handle.net/11536/22988 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4824894 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 103 |
Issue: | 15 |
結束頁: | |
Appears in Collections: | Articles |
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