標題: ELECTROLUMINESCENCE CHARACTERISTICS AND CURRENT-CONDUCTION MECHANISM OF A SI-C-H-P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYER INSERTED AT P-I INTERFACE
作者: JEN, TS
PAN, JW
SHIN, NF
HONG, JW
CHANG, CY
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-十月-1994
摘要: In order to improve the electroluminescence (EL) characteristics of the hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diode (TFLED), a barrier layer (BL) was inserted at its p-i interface to enhance the hole injection efficiency under forward-bias operation. The a-SiC:H TFLED's with various optical gaps of BL had been fabricated and characterized. In addition, a composition-graded n+-layer was used to reduce its series and contact resistances to the Al electrode and hence the EL threshold voltage (V(th)) of an a-SiC:H BL TFLED. The highest obtainable brightness of an a-SiC:H BL TFLED was 342 cd/m2 at an injection current density of 600 mA/cm2 and the lowest EL V(th) achievable was 6.0 V. The current-conduction mechanism of an a-SiC:H BL TFLED had also been investigated. Within the lower applied-bias region, it showed an ohmic current, while within the higher applied-bias region, a space-charge-limited current (SCLC) was observed.
URI: http://dx.doi.org/10.1109/16.324586
http://hdl.handle.net/11536/2299
ISSN: 0018-9383
DOI: 10.1109/16.324586
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 41
Issue: 10
起始頁: 1761
結束頁: 1769
顯示於類別:期刊論文