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dc.contributor.authorPan, Shan-Pengen_US
dc.contributor.authorLiu, Tzong-Shien_US
dc.contributor.authorTasi, Min-Chingen_US
dc.contributor.authorLiou, Huay-Chungen_US
dc.date.accessioned2014-12-08T15:33:00Z-
dc.date.available2014-12-08T15:33:00Z-
dc.date.issued2011-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.50.06GJ04en_US
dc.identifier.urihttp://hdl.handle.net/11536/22990-
dc.description.abstractThe demand for accurate measurements of nanostructures is increasing for the microprocesses and nanotechnology used in the semiconductor industry. In this study, we present an improved method for measuring gratings with a pitch size lower than one-half of the laser wavelength by using a modified laser diffractometer (LD). In experiments, the modified LD with a 633nm laser is used to measure a grating with a 288nm pitch size. This result is compared with results measured by both a metrological atomic force microscope and the traditional LD with a 543nm laser. The validity of this method is demonstrated. The difference between the pitch size of 288nm obtained by these three methods is approximately 0.17 nm. (C) 2011 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleGrating Pitch Measurement Beyond the Diffraction Limit with Modified Laser Diffractometryen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.50.06GJ04en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume50en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000291748900085-
dc.citation.woscount1-
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