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dc.contributor.authorHsieh, Ying-Huien_US
dc.contributor.authorStrelcov, Evghenien_US
dc.contributor.authorLiou, Jia-Mingen_US
dc.contributor.authorShen, Chia-Yingen_US
dc.contributor.authorChen, Yi-Chunen_US
dc.contributor.authorKalinin, Sergei V.en_US
dc.contributor.authorChu, Ying-Haoen_US
dc.date.accessioned2014-12-08T15:33:01Z-
dc.date.available2014-12-08T15:33:01Z-
dc.date.issued2013-10-01en_US
dc.identifier.issn1936-0851en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nn402763wen_US
dc.identifier.urihttp://hdl.handle.net/11536/22995-
dc.description.abstractHeterointerfaces between complex oxides have sparked considerable interest due to their fascinating physical properties and their offering of new possibilities for next-generation electronic devices. The key to realize practical applications is the control through external stimuli. In this study, we take the self-assembled BiFeO3-CoFe2O4 tubular interface as a model system to demonstrate the nonvolatile electric control of the local conduction at the complex oxide tubular interface. The fundamental mechanism behind this modulation was explored based on static and dynamic conductive atomic force microscopies. We found the movement of oxygen vacancies in the BiFeO3-CoFe2O4 heterostructure is the key to drive this intriguing behavior. This study delivers a possibility in developing next-generation electronic devices.en_US
dc.language.isoen_USen_US
dc.subjecttubular interfaceen_US
dc.subjectBFO-CFOen_US
dc.subjectoxygen vacancyen_US
dc.subjectconductive AFMen_US
dc.subjectFORC-IVen_US
dc.titleElectrical Modulation of the Local Conduction at Oxide Tubular Interfacesen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nn402763wen_US
dc.identifier.journalACS NANOen_US
dc.citation.volume7en_US
dc.citation.issue10en_US
dc.citation.spage8627en_US
dc.citation.epage8633en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000326209100032-
dc.citation.woscount5-
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