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dc.contributor.authorThu, L. M.en_US
dc.contributor.authorChiu, W. T.en_US
dc.contributor.authorVoskoboynikov, O.en_US
dc.date.accessioned2014-12-08T15:33:03Z-
dc.date.available2014-12-08T15:33:03Z-
dc.date.issued2013-10-01en_US
dc.identifier.issn0370-1972en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssb.201384230en_US
dc.identifier.urihttp://hdl.handle.net/11536/23015-
dc.description.abstractWe theoretically study the orbital diamagnetic response of three-dimensional arrays of embedded InAs/GaAs wobbled nano-rings. To simulate the rings' magnetic characteristics, we use the effective one band Hamiltonian (energy and position-dependent electron effective mass and Lande factor) and smooth three-dimensional confinement potential that is mapping the actual strain and material content inside the rings. First, we obtain the magnetic susceptibility of an individual nano-ring. Once it is achieved, using the Claussius-Mossotti relation we estimate the effective susceptibility of three-dimensional arrays of the rings. We show that conventionally diamagnetic InAs/GaAs ring structures under certain conditions can demonstrate the positive peak of the effective magnetic susceptibility of the arrays, that we call negative-diamagnetic response. The negative-diamagnetic (positive susceptibility) peak remains Lorentz-like shaped and gradually disappears when the rings' concentration in the arrays decreases. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.language.isoen_USen_US
dc.subjectdiamagnetismen_US
dc.subjectmapping methoden_US
dc.subjectnano-ringsen_US
dc.title"Negative" diamagnetism of three-dimensional arrays of semiconductor nano-ringsen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/pssb.201384230en_US
dc.identifier.journalPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICSen_US
dc.citation.volume250en_US
dc.citation.issue10en_US
dc.citation.spage2080en_US
dc.citation.epage2084en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000325484300017-
dc.citation.woscount1-
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