Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Thu, L. M. | en_US |
| dc.contributor.author | Chiu, W. T. | en_US |
| dc.contributor.author | Voskoboynikov, O. | en_US |
| dc.date.accessioned | 2014-12-08T15:33:03Z | - |
| dc.date.available | 2014-12-08T15:33:03Z | - |
| dc.date.issued | 2013-10-01 | en_US |
| dc.identifier.issn | 0370-1972 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/pssb.201384230 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/23015 | - |
| dc.description.abstract | We theoretically study the orbital diamagnetic response of three-dimensional arrays of embedded InAs/GaAs wobbled nano-rings. To simulate the rings' magnetic characteristics, we use the effective one band Hamiltonian (energy and position-dependent electron effective mass and Lande factor) and smooth three-dimensional confinement potential that is mapping the actual strain and material content inside the rings. First, we obtain the magnetic susceptibility of an individual nano-ring. Once it is achieved, using the Claussius-Mossotti relation we estimate the effective susceptibility of three-dimensional arrays of the rings. We show that conventionally diamagnetic InAs/GaAs ring structures under certain conditions can demonstrate the positive peak of the effective magnetic susceptibility of the arrays, that we call negative-diamagnetic response. The negative-diamagnetic (positive susceptibility) peak remains Lorentz-like shaped and gradually disappears when the rings' concentration in the arrays decreases. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | diamagnetism | en_US |
| dc.subject | mapping method | en_US |
| dc.subject | nano-rings | en_US |
| dc.title | "Negative" diamagnetism of three-dimensional arrays of semiconductor nano-rings | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1002/pssb.201384230 | en_US |
| dc.identifier.journal | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | en_US |
| dc.citation.volume | 250 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 2080 | en_US |
| dc.citation.epage | 2084 | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.identifier.wosnumber | WOS:000325484300017 | - |
| dc.citation.woscount | 1 | - |
| Appears in Collections: | Articles | |
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