Low power consumption resistance random access memory with Pt/InOx/TiN structure

doi:10.1063/1.4818672

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DC 欄位	值	語言
dc.contributor.author	Yang, Jyun-Bao	en_US
dc.contributor.author	Chang, Ting-Chang	en_US
dc.contributor.author	Huang, Jheng-Jie	en_US
dc.contributor.author	Chen, Yu-Ting	en_US
dc.contributor.author	Tseng, Hsueh-Chih	en_US
dc.contributor.author	Chu, Ann-Kuo	en_US
dc.contributor.author	Sze, Simon M.	en_US
dc.contributor.author	Tsai, Ming-Jinn	en_US
dc.date.accessioned	2014-12-08T15:33:04Z	-
dc.date.available	2014-12-08T15:33:04Z	-
dc.date.issued	2013-09-02	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.4818672	en_US
dc.identifier.uri	http://hdl.handle.net/11536/23026	-
dc.description.abstract	In this study, the resistance switching characteristics of a resistive random access memory device with Pt/InOx/TiN structure is investigated. Unstable bipolar switching behavior is observed during the initial switching cycle, which then stabilizes after several switching cycles. Analyses indicate that the current conduction mechanism in the resistance state is dominated by Ohmic conduction. The decrease in electrical conductance can be attributed to the reduction of the cross-sectional area of the conduction path. Furthermore, the device exhibits low operation voltage and power consumption. (C) 2013 AIP Publishing LLC.	en_US
dc.language.iso	en_US	en_US
dc.title	Low power consumption resistance random access memory with Pt/InOx/TiN structure	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.4818672	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	103	en_US
dc.citation.issue	10	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000324389700045	-
dc.citation.woscount	1	-
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