標題: | THERMAL-STABILITY OF CU/COSI2 CONTACTED P+N SHALLOW JUNCTION WITH AND WITHOUT TIW DIFFUSION BARRIER |
作者: | CHIOU, JC CHEN, MC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-十月-1994 |
摘要: | The thermal stability of Cu/CoSi2 contacted p+n shallow junction diodes with and without TiW diffusion barrier was investigated with respect to metallurgical reaction and electrical characteristics. Without the diffusion barrier, the Cu (2000 angstrom)/CoSi2 (700 angstrom)/p+n diodes (with a junction depth of 0.2 mum measured from the silicide surface) were able to sustain a 30 s rapid thermal annealing (RTA) in N2 ambient up to 450-degrees-C without losing the integrity of the devices characteristics. The Cu3Si phase was observed at the CoSi2/Si interface after 500-degrees-C annealing; the phase penetrated through the CoSi2 layer causing a catastrophic change in layer structure after 700-degrees-C annealing. With the addition of a 1200 angstrom thickness of TiW diffusion barrier between Cu and CoSi2, the junction diodes were able to sustain the RTA treatment up to 775-degrees-C without degrading the basic electrical characteristics, and no metallurgical reaction could be observed even after an 800-degrees-C annealing. |
URI: | http://hdl.handle.net/11536/2306 |
ISSN: | 0013-4651 |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 141 |
Issue: | 10 |
起始頁: | 2804 |
結束頁: | 2810 |
顯示於類別: | 期刊論文 |