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dc.contributor.authorKuo, Chien-Ien_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorChang, Chia-Taen_US
dc.contributor.authorChang, Chia-Yuanen_US
dc.contributor.authorMiyamoto, Yasuyukien_US
dc.date.accessioned2014-12-08T15:03:46Z-
dc.date.available2014-12-08T15:03:46Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-2258-6en_US
dc.identifier.issn1092-8669en_US
dc.identifier.urihttp://hdl.handle.net/11536/2308-
dc.description.abstract80-nm high electron mobility transistors (HEMTs) with different Indium content in In(x)Ga(1-x)As channel from 52%, 70% to 100% have been fabricated. Device performances degradation were observed on the DC measurement and RF characteristics caused by impact ionization at different drain bias, >0.8V (InAs/In(0.7)Ga(0.3)As), > 1V (In(0.7)Ga(0.3)As) and > 1.5V (In(0.52)Ga(0.48)As), respectively. The impact ionization phenomenon should be avoided for high speed, low power application because it limits the highest drain bias of the device which in turn limits the drift velocity under specific applied electric field.en_US
dc.language.isoen_USen_US
dc.subjectInGaAs-channelen_US
dc.subjectInAs-channelen_US
dc.subjectHEMTsen_US
dc.subjectimpact ionizationen_US
dc.titleInvestigation of Impact Ionization from In(x)Ga(1-x)As to InAs Channel HEMTs for High Speed and Low Power Applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)en_US
dc.citation.spage205en_US
dc.citation.epage208en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000267695700058-
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