Full metadata record
DC FieldValueLanguage
dc.contributor.authorLIN, HCen_US
dc.contributor.authorJUNG, TGen_US
dc.contributor.authorLIN, HYen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorCHEN, LPen_US
dc.date.accessioned2014-12-08T15:03:46Z-
dc.date.available2014-12-08T15:03:46Z-
dc.date.issued1994-09-26en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.112890en_US
dc.identifier.urihttp://hdl.handle.net/11536/2311-
dc.description.abstractIn this report, we present a novel approach for fabricating polycrystalline silicon-germanium thin-film transistors at low temperatures (less than or equal to 550 degrees C). A bottom gate configuration is used for this approach, and an i-Si1-xGex/i-Si/p(+)-Si1-yGey multilayer is deposited sequentially on the gate oxide using an ultra-high vacuum chemical vapor deposition technique. The i-Si1-xGex serves as the channel while the i-Si is used as a buffer layer for allowing p(+)-Si1-yGey to be etched selectively on. p-channel thin-film transistors with a held-effect mobility of 13 cm(2)/V s were achieved using this method, which is superior to those grown by low pressure chemical vapor deposition. Our results indicate that the deposition of poly-Si1-xGex/poly-Si multilayer structure would be a promising way for polycrystalline thin-film device applications.en_US
dc.language.isoen_USen_US
dc.titleFABRICATION OF P-CHANNEL POLYCRYSTALLINE SI1-XGEX THIN-FILM TRANSISTORS BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.112890en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume65en_US
dc.citation.issue13en_US
dc.citation.spage1700en_US
dc.citation.epage1702en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1994PH33200033-
dc.citation.woscount12-
Appears in Collections:Articles