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dc.contributor.authorLin, Chun-Yien_US
dc.contributor.authorLin, Ming-Weien_US
dc.contributor.authorLiang, Ching-Piaoen_US
dc.contributor.authorChung, Shyh-Jongen_US
dc.date.accessioned2014-12-08T15:33:15Z-
dc.date.available2014-12-08T15:33:15Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-934142-20-2en_US
dc.identifier.issn1559-9450en_US
dc.identifier.urihttp://hdl.handle.net/11536/23141-
dc.description.abstractIn this paper, a low power and high gain low-noise amplifier (LNA) is presented for 24 GHz FMCW radar applications fabricated in a 0.18 mu m RF CMOS process. The proposed LNA is with the characteristics of the source inductive degeneration type, the current reuse technique, and the invariance of current density in CMOS process. The proposed LNA with a compact size has a gain of 18.95 dB and a noise figure of 5.8 dB, while consuming 11.3 mW. The measured input 1-dB compression point (IP1 dB) and an input third-order intercept point (IIP3) are -26 dBm and -16.5 dBm, respectively.en_US
dc.language.isoen_USen_US
dc.titleA 24 GHz Low-power and High-gain Low-noise Amplifier Using 0.18 mu m CMOS Technology for FMCW Radar Applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS 2012)en_US
dc.citation.spage892en_US
dc.citation.epage896en_US
dc.contributor.department傳播研究所zh_TW
dc.contributor.departmentInstitute of Communication Studiesen_US
dc.identifier.wosnumberWOS:000327380000188-
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