標題: | Investigation on plasma treatment for transparent Al-Zn-Sn-O thin film transistor application |
作者: | Chang, Chih-Hsiang Liu, Po-Tsun 光電工程學系 顯示科技研究所 Department of Photonics Institute of Display |
關鍵字: | Thermal annealing;AlZnSnO TFT;Plasma post treatment;Oxygen bonding;Reliability mechanism |
公開日期: | 31-十二月-2013 |
摘要: | This work reported the physical characteristics and electrical performance of amorphous Al-Zn-Sn-O thin film transistor (a-AZTO TFT) device under the temperature effects of thermal annealing process and various gas plasma post-treatments. The thermal annealing at 450 degrees C could strengthen the oxygen bonding of a-AZTO film, thereby improving the film quality and TFT device performance. In addition, the oxygen deficient can be reduced effectively by the O-2 and N2O plasma treatments, respectively, leading to enhanced electrical reliability. Also, the optical energy gap of a-AZTO films with O-2 or N2O plasma treatment was measured about 3.5 eV, which indicated that all of the a-AZTO films were insensitive to visible light. On the other hand, the electron mobility of a-AZTO TFT was observed to be promoted after NH3 plasma post-treatment. The improvement could be attributed to a slight doping effect of H+ ions. These results showed the potential of post-treatments for flat panel displays applications of transparent a-AZTO TFT technology. (C) 2013 Elsevier B. V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2013.06.042 http://hdl.handle.net/11536/23199 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2013.06.042 |
期刊: | THIN SOLID FILMS |
Volume: | 549 |
Issue: | |
起始頁: | 36 |
結束頁: | 41 |
顯示於類別: | 期刊論文 |