Investigation of quantum dot passively mode-locked lasers with excited-state transition

doi:10.1364/OE.21.026113

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, Hsu-Chieh	en_US
dc.contributor.author	Lee, Chien-Ping	en_US
dc.date.accessioned	2014-12-08T15:33:35Z	-
dc.date.available	2014-12-08T15:33:35Z	-
dc.date.issued	2013-11-04	en_US
dc.identifier.issn	1094-4087	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OE.21.026113	en_US
dc.identifier.uri	http://hdl.handle.net/11536/23272	-
dc.description.abstract	Monolithic passively mode-locked quantum dot lasers with excited-state transition were investigated in a broad operating range without ground-state lasing. Optical and electrical characteristics of these mode locked lasers were studied in detail at different levels of injection current and absorber bias. Very different behaviors in the evolution of the hysteresis, the optical spectra and the evolution of repetition frequency were observed between our lasers and conventional quantum dot lasers with ground-state transition. Possible mechanisms behind these observed phenomena were proposed and discussed. A minimum pulse width of 3.3 ps and an externally compressed pulse width of 0.78 ps were obtained. (C) 2013 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Investigation of quantum dot passively mode-locked lasers with excited-state transition	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OE.21.026113	en_US
dc.identifier.journal	OPTICS EXPRESS	en_US
dc.citation.volume	21	en_US
dc.citation.issue	22	en_US
dc.citation.spage	26113	en_US
dc.citation.epage	26122	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000327007800070	-
dc.citation.woscount	0	-
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