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dc.contributor.authorWang, Li-Rongen_US
dc.contributor.authorLo, Kai-Yuen_US
dc.contributor.authorJou, Shyh-Jyeen_US
dc.date.accessioned2014-12-08T15:33:44Z-
dc.date.available2014-12-08T15:33:44Z-
dc.date.issued2013-10-01en_US
dc.identifier.issn0916-8524en_US
dc.identifier.urihttp://dx.doi.org/10.1587/transele.E96.C.1351en_US
dc.identifier.urihttp://hdl.handle.net/11536/23317-
dc.description.abstractThis paper proposes a new double-edge-triggered implicitly level-converting flip-flop, suitable for a low-power and low-voltage design. The design employs a sense amplifier architecture to reduce the delay and power consumption. Experimentally, when implemented with a 130-nm, single-V-t and 0.84 V V-DD process, it achieves 64% power-delay product (PDP) improvement, and moreover, 78% PDP improvement when implemented with a mixed-V-t technology, as compared to that of the classic double-edge-triggered flip-flop design.en_US
dc.language.isoen_USen_US
dc.subjectdouble-edge-triggereden_US
dc.subjectflip-flopen_US
dc.subjectlevel-convertingen_US
dc.subjectsense amplifieren_US
dc.subjectmixed threshold voltageen_US
dc.titleA Low-Power Level-Converting Double-Edge-Triggered Flip-Flop Designen_US
dc.typeArticleen_US
dc.identifier.doi10.1587/transele.E96.C.1351en_US
dc.identifier.journalIEICE TRANSACTIONS ON ELECTRONICSen_US
dc.citation.volumeE96Cen_US
dc.citation.issue10en_US
dc.citation.spage1351en_US
dc.citation.epage1355en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000326667800020-
dc.citation.woscount0-
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