完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHuang, Jheng-Mingen_US
dc.contributor.authorKu, Ching-Shunen_US
dc.contributor.authorLee, Hsin-Yien_US
dc.contributor.authorLin, Chih-Mingen_US
dc.contributor.authorChen, San-Yuanen_US
dc.date.accessioned2014-12-08T15:33:45Z-
dc.date.available2014-12-08T15:33:45Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn0257-8972en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.surfcoat.2012.05.067en_US
dc.identifier.urihttp://hdl.handle.net/11536/23328-
dc.description.abstractA novel process in an atomic layer deposition system with "flow-rate interruption" (FRI) was developed to obtain epitaxial ZnO films of high quality. The m-plane ZnO thin films were grown on m-plane sapphire substrates by atomic layer deposition with FRI or a conventional continuous-flow method at the temperature in the range of 25-260 degrees C; 200 degrees C appeared optimal. Measurements of X-ray reflectivity indicated that the thickness of ZnO films with FRI is almost twice than that grown with the continuous-flow method. The structural, optical and electrical properties were investigated with X-ray diffraction (XRD), photoluminescence and Hall measurements. The diffraction results indicated that the interrupted flow might extend the reaction of diethylzinc and water through an increased duration to improve the crystallographic quality of the films. According to the results from XRD at high resolution, to substantiate the epitaxial relation between the thin film and the substrate, an off-normal azimuthal scan along ZnO (201) demonstrated two-fold symmetry that indicated the ZnO films to be in epitaxial growth on sapphire. The photoluminescence results showed a strongly enhanced near-band-edge emission of an FRI sample, and the donor-bond exciton appearing in films also indicated superior crystalline qualities. The Hall mobility of the FRI method was up to 64.7 cm(2) V-1 s(-1). The FRI method evidently improved the structural, optical and electrical properties of the ZnO films with small consumption of precursors. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectAtomic-layer depositionen_US
dc.subjectFlow-rate interruptionen_US
dc.subjectZnOen_US
dc.subjectX-ray diffractionen_US
dc.titleGrowth of high-quality epitaxial ZnO films on (10-10) sapphire by atomic layer deposition with flow-rate interruption methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.surfcoat.2012.05.067en_US
dc.identifier.journalSURFACE & COATINGS TECHNOLOGYen_US
dc.citation.volume231en_US
dc.citation.issueen_US
dc.citation.spage323en_US
dc.citation.epage327en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000328094200070-
dc.citation.woscount0-
顯示於類別:期刊論文


文件中的檔案:

  1. 000328094200070.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。