完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, Jyh-Liang | en_US |
dc.contributor.author | Hsieh, Tsang-Yen | en_US |
dc.contributor.author | Yang, Po-Yu | en_US |
dc.contributor.author | Hwang, Chuan-Chou | en_US |
dc.contributor.author | Shye, Der-Chi | en_US |
dc.contributor.author | Lee, I-Che | en_US |
dc.date.accessioned | 2014-12-08T15:33:46Z | - |
dc.date.available | 2014-12-08T15:33:46Z | - |
dc.date.issued | 2013-09-01 | en_US |
dc.identifier.issn | 0257-8972 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.surfcoat.2012.01.019 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/23330 | - |
dc.description.abstract | Al-doped ZnO (AZO) nanowires (NWs) were synthesized using low-temperature hydrothermal growth to investigate field emission (FE) characteristics. The intensity ratio of NBE peak to DLE peak (R = I-NBE/I-DLE) increases and the half-maximum of NBE peaks (FWHMNBE) decreases with the Al contents. Experimental results reveal the FE characteristics of AZO NWs are functions of Al content. Moreover, the larger R value and the smaller FWHMNBE are found as the oxygen annealing temperature increases. The hydrothermal AZO NWs annealed in oxygen ambience with an appropriate temperature (i.e. 300-500 degrees C) can demonstrate the further improved FE properties (i.e. the turn-on field of 1.70 V/mu m (at 1 mu A/cm(2)), threshold field of 2.92 V/mu m (at 1 mA/cm(2)), and beta of 4547). (C) 2012 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Al-doped zinc oxide (AZO) | en_US |
dc.subject | Hydrothermal growth | en_US |
dc.subject | Nanowire | en_US |
dc.subject | Field emission | en_US |
dc.subject | Oxygen annealing | en_US |
dc.title | Oxygen annealing effect on field-emission characteristics of hydrothermally synthesized Al-doped ZnO nanowires | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.surfcoat.2012.01.019 | en_US |
dc.identifier.journal | SURFACE & COATINGS TECHNOLOGY | en_US |
dc.citation.volume | 231 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 423 | en_US |
dc.citation.epage | 427 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000328094200089 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |