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dc.contributor.authorWang, Jyh-Liangen_US
dc.contributor.authorHsieh, Tsang-Yenen_US
dc.contributor.authorYang, Po-Yuen_US
dc.contributor.authorHwang, Chuan-Chouen_US
dc.contributor.authorShye, Der-Chien_US
dc.contributor.authorLee, I-Cheen_US
dc.date.accessioned2014-12-08T15:33:46Z-
dc.date.available2014-12-08T15:33:46Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn0257-8972en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.surfcoat.2012.01.019en_US
dc.identifier.urihttp://hdl.handle.net/11536/23330-
dc.description.abstractAl-doped ZnO (AZO) nanowires (NWs) were synthesized using low-temperature hydrothermal growth to investigate field emission (FE) characteristics. The intensity ratio of NBE peak to DLE peak (R = I-NBE/I-DLE) increases and the half-maximum of NBE peaks (FWHMNBE) decreases with the Al contents. Experimental results reveal the FE characteristics of AZO NWs are functions of Al content. Moreover, the larger R value and the smaller FWHMNBE are found as the oxygen annealing temperature increases. The hydrothermal AZO NWs annealed in oxygen ambience with an appropriate temperature (i.e. 300-500 degrees C) can demonstrate the further improved FE properties (i.e. the turn-on field of 1.70 V/mu m (at 1 mu A/cm(2)), threshold field of 2.92 V/mu m (at 1 mA/cm(2)), and beta of 4547). (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectAl-doped zinc oxide (AZO)en_US
dc.subjectHydrothermal growthen_US
dc.subjectNanowireen_US
dc.subjectField emissionen_US
dc.subjectOxygen annealingen_US
dc.titleOxygen annealing effect on field-emission characteristics of hydrothermally synthesized Al-doped ZnO nanowiresen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.surfcoat.2012.01.019en_US
dc.identifier.journalSURFACE & COATINGS TECHNOLOGYen_US
dc.citation.volume231en_US
dc.citation.issueen_US
dc.citation.spage423en_US
dc.citation.epage427en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000328094200089-
dc.citation.woscount2-
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