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完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorWei, Kuo-Hsiuen_US
dc.contributor.authorWang, Yu-Shengen_US
dc.contributor.authorLiu, Chuan-Puen_US
dc.contributor.authorChen, Kei-Weien_US
dc.contributor.authorWang, Ying-Langen_US
dc.contributor.authorCheng, Yi-Lungen_US
dc.date.accessioned2014-12-08T15:33:46Z-
dc.date.available2014-12-08T15:33:46Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn0257-8972en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.surfcoat.2012.04.004en_US
dc.identifier.urihttp://hdl.handle.net/11536/23336-
dc.description.abstractThere are many kinds of commercial slurries used in Cu CMP. Major components include an oxidizing agent, complexing agents, inhibitors, and abrasives. We analyze the abrasive particle size by TEM and light scattering. Cu CMP polishing mechanism is also discussed under different particle size distribution. The complexing agent transportation will be the rate determining step when a small abrasive is insufficient, but the copper hydroxide removal rate will determine the overall polishing rate when the amount of smaller particles is enough. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectAbrasiveen_US
dc.subjectParticle size distributionen_US
dc.subjectPSDen_US
dc.subjectGlycineen_US
dc.subjectCopperen_US
dc.subjectCMPen_US
dc.titleThe influence of abrasive particle size in copper chemical mechanical planarizationen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.surfcoat.2012.04.004en_US
dc.identifier.journalSURFACE & COATINGS TECHNOLOGYen_US
dc.citation.volume231en_US
dc.citation.issueen_US
dc.citation.spage543en_US
dc.citation.epage545en_US
dc.contributor.department光電學院zh_TW
dc.contributor.departmentCollege of Photonicsen_US
dc.identifier.wosnumberWOS:000328094200114-
dc.citation.woscount2-
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