標題: Effect of moisture on electrical properties and reliability of low dielectric constant materials
作者: Cheng, Yi-Lung
Leon, Ka-Wai
Huang, Jun-Fu
Chang, Wei-Yuan
Chang, Yu-Min
Leu, Jihperng
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Low-k dielectric;Porogen;Moisture;Reliability;Breakdown;TDDB;Electromigration
公開日期: 1-Feb-2014
摘要: The effect of absorbed moisture on the electrical characteristics and reliability of low dielectric constant materials (low-k) was investigated in this study. The experimental results reveal that porous low-k dielectrics absorb more moisture than dense low-k dielectrics. This absorbed moisture degrades the electrical performance and reliability of both classes of low-k dielectrics. Annealing at a higher temperature of 400 degrees C is required to decompose the physically-adsorbed moisture and thereby restore reliability performance. However, the chemically-adsorbed moisture seems to be difficult to remove by annealing at 400 degrees C, causing a degraded TDDB performance. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2013.08.018
http://hdl.handle.net/11536/23370
ISSN: 0167-9317
DOI: 10.1016/j.mee.2013.08.018
期刊: MICROELECTRONIC ENGINEERING
Volume: 114
Issue: 
起始頁: 12
結束頁: 16
Appears in Collections:Articles


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