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dc.contributor.authorTsai, T. K.en_US
dc.contributor.authorHsueh, S. J.en_US
dc.contributor.authorFang, J. S.en_US
dc.date.accessioned2014-12-08T15:33:56Z-
dc.date.available2014-12-08T15:33:56Z-
dc.date.issued2014-01-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-013-2829-zen_US
dc.identifier.urihttp://hdl.handle.net/11536/23392-
dc.description.abstractAl (x) O (y) /Ni/Al (x) O (y) multilayered absorber coatings were deposited on stainless-steel substrates using reactive direct-current (DC) magnetron sputtering. Al (x) O (y) films with different morphologies, structures, and optical transmittances were obtained by varying the DC power and oxygen flux. The Al (x) O (y) films were characterized using field-emission scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray spectrometry, grazing-incidence x-ray diffraction, and ultraviolet/visible/near-infrared spectrophotometry. The effect of the thickness of the Al (x) O (y) films on the optical properties of Al (x) O (y) /Ni/Al (x) O (y) coatings was also investigated. Experimental results show that the thermal emittance of the Al (x) O (y) /Ni/Al (x) O (y) multilayered absorber coatings decreases as the thickness of the Al (x) O (y) top layer is decreased. The Al (x) O (y) /Ni/Al (x) O (y) multilayered absorber coating with 70-nm-thick Al (x) O (y) top and bottom layers showed the best optical properties. The thermal stability of the Al (x) O (y) /Ni/Al (x) O (y) multilayered absorber coating in which the Al (x) O (y) films were deposited at conditions of 150 W and 8 sccm O-2 was at least 12 h when the multilayered absorber was annealed at 400A degrees C in air.en_US
dc.language.isoen_USen_US
dc.subjectAlxOy/Ni/AlxOyen_US
dc.subjectmultilayered absorber coatingen_US
dc.subjectsputteringen_US
dc.subjectabsorptanceen_US
dc.subjectthermal emittanceen_US
dc.titleOptical Properties of AlxOy/Ni/AlxOy Multilayered Absorber Coatings Prepared by Reactive DC Magnetron Sputteringen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11664-013-2829-zen_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume43en_US
dc.citation.issue1en_US
dc.citation.spage229en_US
dc.citation.epage235en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000329104500030-
dc.citation.woscount1-
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