標題: | Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory |
作者: | Zhang, Rui Tsai, Tsung-Ming Chang, Ting-Chang Chang, Kuan-Chang Chen, Kai-Huang Lou, Jen-Chung Young, Tai-Fa Chen, Jung-Hui Huang, Syuan-Yong Chen, Min-Chen Shih, Chih-Cheng Chen, Hsin-Lu Pan, Jhih-Hong Tung, Cheng-Wei Syu, Yong-En Sze, Simon M. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 21-十二月-2013 |
摘要: | In this paper, multi-layer Zn:SiO2/SiO2 structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO2/SiO2 structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices. (C) 2013 AIP Publishing LLC. |
URI: | http://dx.doi.org/10.1063/1.4843695 http://hdl.handle.net/11536/23405 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.4843695 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 114 |
Issue: | 23 |
結束頁: | |
顯示於類別: | 期刊論文 |