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dc.contributor.authorShih, Min-Hsiungen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.contributor.authorYang, Yi-Chunen_US
dc.contributor.authorChou, Hsiang-Yuen_US
dc.contributor.authorLin, Cheng-Teen_US
dc.contributor.authorSu, Ching-Yuanen_US
dc.date.accessioned2014-12-08T15:34:05Z-
dc.date.available2014-12-08T15:34:05Z-
dc.date.issued2013-12-01en_US
dc.identifier.issn1936-0851en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nn404097sen_US
dc.identifier.urihttp://hdl.handle.net/11536/23426-
dc.description.abstractGraphene, which exhibits excellent thermal conductivity, is a potential heat dissipation medium for compact optoelectronic devices. Photonic devices normally produce large-quantity of unwanted heat, and thus, a heat dissipation strategy is urgently needed. In this study, single-layer graphene (SLG) grown by chemical vapor deposition (CVD) is used to cover the surface of a photonic crystal (PhC) cavity, where the heat flux produced by the PhC cavity can be efficiently dissipated along the in-plane direction of the SLG. The thermal properties of the graphene-capped PhC cavity were characterized by experiments and theoretical calculations. The thermal resistance of the SLG-capped PhC cavity obtained from experiments is lower than half of that of a bare PhC cavity. The temperature of a SLG-capped PhC cavity is 45 K lower than that without SLG capping under an optical power of 100 mu W. Our simulation results indicate that SLG receives the majority of the heat fluxes from the device, leading to the efficient heat dissipation. Both the experimental and simulation results suggest that the SLG is a promising material to enhance the heat dissipation efficiency for optoelectronic applications.en_US
dc.language.isoen_USen_US
dc.subjectgrapheneen_US
dc.subjectphotonic crystalsen_US
dc.subjectheat dissipationen_US
dc.subjectthermal resistanceen_US
dc.subjectoptical cavityen_US
dc.titleEfficient Heat Dissipation of Photonic Crystal Microcavity by Mono layer Grapheneen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nn404097sen_US
dc.identifier.journalACS NANOen_US
dc.citation.volume7en_US
dc.citation.issue12en_US
dc.citation.spage10818en_US
dc.citation.epage10824en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000329137100041-
dc.citation.woscount0-
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