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dc.contributor.authorLU, YYen_US
dc.contributor.authorLAI, CHen_US
dc.contributor.authorTSENG, TYen_US
dc.date.accessioned2014-12-08T15:03:48Z-
dc.date.available2014-12-08T15:03:48Z-
dc.date.issued1994-09-01en_US
dc.identifier.issn0002-7820en_US
dc.identifier.urihttp://hdl.handle.net/11536/2344-
dc.description.abstractThe influence of soaking time at 1200 degrees C on the temperature coefficient of resistivity (TCR) of semiconducting barium titanate ceramics has been investigated. It is found that soaking duration has influence on the room-temperature resistivity, the maximum resistivity, the temperature (T-max) at which the maximum resistivity appears, and TCR of the positive temperature coefficient of resistivity (PTCR) ceramics. The increased room-temperature resistivity with the increase of soaking time is contributed mainly by the increase of grain boundary resistivity examined by the complex-plane impedance method. The obtained surface acceptor density (N-s) by capacitance-voltage measurement is found to increase with the soaking duration. The higher N-s contributes to higher built-in potential and results in lower T-max and higher maximum resistivity. Therefore, the increased surface acceptor density from increasing the soaking time at 1200 degrees C increases the temperature coefficient of resistivity of PTCR ceramics.en_US
dc.language.isoen_USen_US
dc.titleEFFECT OF SOAKING TIME ON THE TEMPERATURE-COEFFICIENT OF RESISTIVITY OF SEMICONDUCTING BARIUM-TITANATE PTCR CERAMICSen_US
dc.typeNoteen_US
dc.identifier.journalJOURNAL OF THE AMERICAN CERAMIC SOCIETYen_US
dc.citation.volume77en_US
dc.citation.issue9en_US
dc.citation.spage2461en_US
dc.citation.epage2464en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994PH19900034-
dc.citation.woscount5-
Appears in Collections:Articles