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dc.contributor.authorKuo, Li-Minen_US
dc.contributor.authorChou, Yi-Chiaen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.contributor.authorLu, Chien-Chiaen_US
dc.contributor.authorChao, Shuchien_US
dc.date.accessioned2014-12-08T15:34:26Z-
dc.date.available2014-12-08T15:34:26Z-
dc.date.issued2014-03-01en_US
dc.identifier.issn0925-4005en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.snb.2013.11.109en_US
dc.identifier.urihttp://hdl.handle.net/11536/23572-
dc.description.abstractIn this study, an easily implemented surface modification scheme is reported employing Ta2O5 membrane which covers IrO2 electrode in response to H+ and eliminating redox species interference. Evidence shows that H+ can pass through Ta2O5 films and react with IrO2/Pt electrodes due to proton-electron double injection. A Ta2O5 membrane, an ionic conductor with an insulating property, blocks the transport of electrons generated from oxygen perturbation in the solution. The conduction of both electrons and protons preserve the current continuity across the interface. Owing to proton-electron double injection, IrO2 will be reduced to Ir(OH)(3) during pH detection. The [IrO2]/[Ir(OH)(3)] will remain constant and therefore the Nernstian electrode potential performs stably as a function of pH (-59.447 to -59.504 mV/pH, 2< pH <13). In addition, the proposed pH microsensor displayed high ion selectivity with respect to K+, Na+, and Li+, with log K-H,K-M values (similar to-12.4) and has a working lifetime over one week. (C) 2013 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectIrO2en_US
dc.subjectTa2O5en_US
dc.subjectpH sensoren_US
dc.subjectProton-electron double injectionen_US
dc.subjectSolid-state sensoren_US
dc.titleA precise pH microsensor using RF-sputtering IrO2 and Ta2O5 films on Pt-electrodeen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.snb.2013.11.109en_US
dc.identifier.journalSENSORS AND ACTUATORS B-CHEMICALen_US
dc.citation.volume193en_US
dc.citation.issueen_US
dc.citation.spage687en_US
dc.citation.epage691en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000330113600095-
dc.citation.woscount1-
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