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dc.contributor.authorFan, Chia-Chanen_US
dc.contributor.authorHuang, Ming-Hongen_US
dc.contributor.authorLin, Wei-Chiehen_US
dc.contributor.authorLin, Hao-Wuen_US
dc.contributor.authorChi, Yunen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorChao, Teng-Chihen_US
dc.contributor.authorTseng, Mei-Rurngen_US
dc.date.accessioned2014-12-08T15:34:29Z-
dc.date.available2014-12-08T15:34:29Z-
dc.date.issued2014-02-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2013.11.040en_US
dc.identifier.urihttp://hdl.handle.net/11536/23584-
dc.description.abstractThe chromaticity and colour-rendering capability of solution-processed single emission layer (EML) white organic light-emitting diodes (W-OLEDs) can be precisely tuned by manipulating the dopant compositions in the EMLs. In this work, we numerically modelled binary, ternary, and quaternary doping single EML W-OLEDs. The correlated colour temperature (CCT), colour-rendering index (CRI), and spectral designs were correlated. The simulation predicted that the quaternary doping system possesses the best chromaticity performance. The corresponding binary, ternary and quaternary doping single EML W-OLEDs were fabricated and characterised to verify the calculation. The solution-processed quaternary doping W-OLEDs were designed with CRI values up to 85, deviations from the Planckian locus (D-u'v') as low as +0.0009, an EQE of 13.7%, a power efficacy of 14.7 lm/W and current efficiency of up to 24.9 cd/A at 1000 cd/m(2). (C) 2013 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSolution-processeden_US
dc.subjectOrganic light-emitting diodesen_US
dc.subjectColour-rendering indexen_US
dc.subjectDaylight locusen_US
dc.titleSingle-emission-layer white organic light-emitting devices: Chromaticity and colour-rendering considerationen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2013.11.040en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume15en_US
dc.citation.issue2en_US
dc.citation.spage517en_US
dc.citation.epage523en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000329974500022-
dc.citation.woscount2-
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