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dc.contributor.authorLu, TRen_US
dc.contributor.authorKuo, CTen_US
dc.contributor.authorChen, TMen_US
dc.date.accessioned2014-12-08T15:01:22Z-
dc.date.available2014-12-08T15:01:22Z-
dc.date.issued1997-10-31en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0040-6090(97)00418-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/235-
dc.description.abstractTo increase the nitrogen content and the degree of crystallinity in carbon nitride films by film deposition techniques (i.e. sputtering, laser ablation etc.), a novel target material composed of carbon nitride has been prepared by UV photo-assisted synthesis. The intention is to replace the traditional graphite target with this material. This synthesis involves photo-chemical reaction of sodium amide and chloroform as carbon and nitrogen sources, respectively, followed by high temperature sintering under flowing nitrogen. Elemental analyses indicate the presence of C, N and H in the target material with a nitrogen to carbon ratio of 0.23. Infrared spectroscopy shows a mixture of sp(3) and sp(2) carbon and sp(2) nitrogen in the sintered powder. Six diffraction peaks attributable to alpha-C3N4 were observed in XRD pattern. Grains of similar to 0.3 pm in diameter in an extended network were also observed in the SEM micrographs. The sintered carbon nitride powder is stable up to 800 degrees C. (C) 1997 Elsevier Science S.A.en_US
dc.language.isoen_USen_US
dc.subjectcarbon nitrideen_US
dc.subjectUV photo-assisted synthesisen_US
dc.titlePreparation of a novel target material for carbon nitride film depositionen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0040-6090(97)00418-5en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume308en_US
dc.citation.issueen_US
dc.citation.spage126en_US
dc.citation.epage129en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000071553400023-
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