標題: | 2 V-operated InGaP-AlGaAs-InGaAs enhancement-mode pseudomorphic HEMT |
作者: | Chu, LH Chang, EY Chen, SH Lien, YC Chang, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | enhancement mode;InGaP;InGaP-InGaAs;PHEMT;single-voltage supply |
公開日期: | 1-二月-2005 |
摘要: | A low-voltage single power supply enhancement-mode InGaP-AlGaAs-InGaAs pseudomorphic high-electron mobility transistor (PHEMT) is reported for the first time. The fabricated 0.5 x 160 mum(2) device shows low knee voltage of 0.3 V, drain-source current (I-DS) of 375 mA/mm and maximum transconductance of 550 mS/mm when drain-source voltage (V-DS) was 2.5 V. High-frequency performance was also achieved; the cut-off frequency(F-t) is 60 GHz and maximum oscillation frequency(F-max) is 128 GHz. The noise figure of the 160-mum gate width device at 17 GHz was measured to be 1.02 dB with 10.12 dB associated gain. The E-mode InGaP-AlGaAs-InGaAs PHEMT, exhibits a high output power density of 453 mW/mm with a high linear gain of 30.5 dB at 2.4 GHz. The E-mode PHEMT can also achieve a high maximum power added efficiency (PAE) of 70%, when tuned for maximum PAE. |
URI: | http://dx.doi.org/10.1109/LED.2004.841184 http://hdl.handle.net/11536/23677 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2004.841184 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 26 |
Issue: | 2 |
起始頁: | 53 |
結束頁: | 55 |
顯示於類別: | 期刊論文 |