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dc.contributor.authorLee, MEen_US
dc.contributor.authorYeh, YCen_US
dc.contributor.authorChung, YHen_US
dc.contributor.authorWu, CLen_US
dc.contributor.authorYang, CSen_US
dc.contributor.authorChou, WCen_US
dc.contributor.authorKuo, CTen_US
dc.contributor.authorJang, DJen_US
dc.date.accessioned2014-12-08T15:34:48Z-
dc.date.available2014-12-08T15:34:48Z-
dc.date.issued2005-02-01en_US
dc.identifier.issn1386-9477en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.physe.2004.08.092en_US
dc.identifier.urihttp://hdl.handle.net/11536/23699-
dc.description.abstractThe carrier capture and relaxation of type II ZnTe/ZnSe quantum dots have been investigated with ultrafast time-resolved photo luminescence upconversion. The carrier capture times were 7 and 38 ps for the Volmer-Weber mode and Stranski-Krastanow mode, respectively. We found that the carrier relaxation of QDs exhibits faster decay under the Volmer-Weber growth mode than under the Stranski-Krastanow growth mode. We attribute the difference of carrier relaxation to the wetting layer formed in the Stranski-Krastanow growth mode. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjecttype II quantum dotsen_US
dc.subjecttime-resolved photoluminescenceen_US
dc.subjectcarrier captureen_US
dc.subjectcarrier relaxationen_US
dc.subjectAuger processen_US
dc.titleCarrier capture and relaxation of self-assembled ZnTe/ZnSe quantum dots prepared under Volmer-Weber and Stranski-Krastanow growth modesen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.physe.2004.08.092en_US
dc.identifier.journalPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURESen_US
dc.citation.volume26en_US
dc.citation.issue1-4en_US
dc.citation.spage422en_US
dc.citation.epage426en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000227249000087-
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