完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHsiao, Yu-Chihen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorWei, Hung-Juen_US
dc.contributor.authorWang, Ta-Weien_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2014-12-08T15:34:49Z-
dc.date.available2014-12-08T15:34:49Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4799-1472-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/23702-
dc.description.abstractA 60 GHz dual-conversion down-converter with a microwave mixer in the first conversion and analog mixers in the second conversion is demonstrated in 0.18-mu m CMOS technology. The first down-converted sub-harmonic mixer consists of a rat-race coupler with the dual-band Chebyshev response and Schottky diodes in anti-parallel configuration. The high cut-off frequency of a Schottky diode helps lowering the conversion loss and noise figure of a microwave mixer. A double balanced resistive mixer is used at the second down-converted mixer. As a result, the conversion gain is about 6 dB in the frequency range of 45 similar to 67 GHz and the IF bandwidth is over 1 GHz. IP1dB is about -5-dBm and IIP3 is about 5-dBm at 45 similar to 67 GHz. The single sideband noise figure is 21 dB at 60 GHz. The total power consumption is 71 mW at 2.5 V.en_US
dc.language.isoen_USen_US
dc.subjectdual conversionen_US
dc.subjectschottky diodeen_US
dc.subjectphase-inverter rat-race coupleren_US
dc.title60-GHz Dual-Conversion Down-Converter Using Schottky Diode and Dual-Band Rat-Race Coupler in Standard 0.18-mu m CMOS Processen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC 2013)en_US
dc.citation.spage182en_US
dc.citation.epage184en_US
dc.contributor.department電機資訊學士班zh_TW
dc.contributor.departmentUndergraduate Honors Program of Electrical Engineering and Computer Scienceen_US
dc.identifier.wosnumberWOS:000330851900058-
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