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dc.contributor.authorLIN, HCen_US
dc.contributor.authorLIN, HYen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorJUNG, TGen_US
dc.contributor.authorWANG, PJen_US
dc.contributor.authorDENG, RCen_US
dc.contributor.authorLIN, JDen_US
dc.date.accessioned2014-12-08T15:03:50Z-
dc.date.available2014-12-08T15:03:50Z-
dc.date.issued1994-08-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.357735en_US
dc.identifier.urihttp://hdl.handle.net/11536/2372-
dc.description.abstractThe deposition and properties of in situ boron-doped polycrystalline silicon (poly-Si) films grown at 550-degrees-C were investigated using an ultrahigh vacuum chemical vapor deposition system. It is observed that, if the doping level is high enough, the boron incorporation would significantly reduce the deposition rate, impede the grain growth, and degrade the crystallinity of the poly-Si films. We also found that the preferential adsorption of boron atoms on the SiO2 surface at the initial stage of deposition shortened the incubation time of deposition. The property of trapping states at the grain boundary is also examined, and a density of about 4.7 X 10(12) CM-2 is obtained for poly-Si films with a doping level less than 2.2 X 10(19) cm-3.en_US
dc.language.isoen_USen_US
dc.titleEFFECT OF BORON DOPING ON THE STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON FILMS GROWN AT REDUCED PRESSURESen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.357735en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume76en_US
dc.citation.issue3en_US
dc.citation.spage1572en_US
dc.citation.epage1577en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994PA30500028-
dc.citation.woscount6-
Appears in Collections:Articles