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dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorChang, Chun-Yien_US
dc.contributor.authorHsieh, Chung-Lunen_US
dc.contributor.authorYang, Yung-Hsuanen_US
dc.contributor.authorChao, Wei-Kuangen_US
dc.contributor.authorChen, Huan-Eanen_US
dc.date.accessioned2014-12-08T15:35:05Z-
dc.date.available2014-12-08T15:35:05Z-
dc.date.issued2014-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2291565en_US
dc.identifier.urihttp://hdl.handle.net/11536/23809-
dc.description.abstractIn this letter, a noise formula is newly proposed to calculate the low frequency noise for the three kinds of amorphous silicon, low temperature polycrystalline silicon, and amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). It is found that the noise behavior of the TFT depends on its drain current in a simple manner. Based on the analysis, the ratios of drain current to the noise level for these TFTs are compared. It reveals that a-IGZO TFT is the best candidate to be used in the active pixel sensor.en_US
dc.language.isoen_USen_US
dc.subjectThin-film transistor (TFTs)en_US
dc.subjectlow frequency noise (LFN)en_US
dc.subjectamorphous indium-gallium-zinc oxide (a-IGZO)en_US
dc.subjectactive pixel sensor (APS)en_US
dc.titleDependence of the Noise Behavior on the Drain Current for Thin Film Transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2013.2291565en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume35en_US
dc.citation.issue2en_US
dc.citation.spage229en_US
dc.citation.epage231en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000331377500027-
dc.citation.woscount1-
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