完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ismail, Muhammad | en_US |
dc.contributor.author | Huang, Chun-Yang | en_US |
dc.contributor.author | Panda, Debashis | en_US |
dc.contributor.author | Hung, Chung-Jung | en_US |
dc.contributor.author | Tsai, Tsung-Ling | en_US |
dc.contributor.author | Jieng, Jheng-Hong | en_US |
dc.contributor.author | Lin, Chun-An | en_US |
dc.contributor.author | Chand, Umesh | en_US |
dc.contributor.author | Rana, Anwar Manzoor | en_US |
dc.contributor.author | Ahmed, Ejaz | en_US |
dc.contributor.author | Talib, Ijaz | en_US |
dc.contributor.author | Nadeem, Muhammad Younus | en_US |
dc.contributor.author | Tseng, Tseung-Yuen | en_US |
dc.date.accessioned | 2014-12-08T15:35:07Z | - |
dc.date.available | 2014-12-08T15:35:07Z | - |
dc.date.issued | 2014-01-27 | en_US |
dc.identifier.issn | 1556-276X | en_US |
dc.identifier.uri | http://dx.doi.org/10.1186/1556-276X-9-45 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/23835 | - |
dc.description.abstract | The mechanism of forming-free bipolar resistive switching in a Zr/CeO (x) /Pt device was investigated. High-resolution transmission electron microscopy and energy-dispersive spectroscopy analysis indicated the formation of a ZrO (y) layer at the Zr/CeO (x) interface. X-ray diffraction studies of CeO (x) films revealed that they consist of nano-polycrystals embedded in a disordered lattice. The observed resistive switching was suggested to be linked with the formation and rupture of conductive filaments constituted by oxygen vacancies in the CeO (x) film and in the nonstoichiometric ZrO (y) interfacial layer. X-ray photoelectron spectroscopy study confirmed the presence of oxygen vacancies in both of the said regions. In the low-resistance ON state, the electrical conduction was found to be of ohmic nature, while the high-resistance OFF state was governed by trap-controlled space charge-limited mechanism. The stable resistive switching behavior and long retention times with an acceptable resistance ratio enable the device for its application in future nonvolatile resistive random access memory (RRAM). | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Resistive switching | en_US |
dc.subject | Space charge-limited conduction (SCLC) | en_US |
dc.subject | Metal-insulator-metal structure | en_US |
dc.subject | Cerium oxide | en_US |
dc.subject | Oxygen vacancy | en_US |
dc.title | Forming-free bipolar resistive switching in nonstoichiometric ceria films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1186/1556-276X-9-45 | en_US |
dc.identifier.journal | NANOSCALE RESEARCH LETTERS | en_US |
dc.citation.volume | 9 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 1 | en_US |
dc.citation.epage | 8 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000331967100001 | - |
dc.citation.woscount | 7 | - |
顯示於類別: | 期刊論文 |