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dc.contributor.authorChen, HGen_US
dc.contributor.authorChang, Len_US
dc.date.accessioned2014-12-08T15:35:08Z-
dc.date.available2014-12-08T15:35:08Z-
dc.date.issued2005-02-01en_US
dc.identifier.issn0925-9635en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.diamond.2004.10.005en_US
dc.identifier.urihttp://hdl.handle.net/11536/23843-
dc.description.abstractDiamond deposition with positive and negative bias enhanced nucleation (BEN) pretreatments on mirror-polished polycrystalline Ni3Al substrates has been investigated, respectively. It was found that diamond deposition on the substrates under both biasing exhibited significant variations among grains of different orientations. The substrate surface was found to be rough in the case of negative biasing, whereas it was smooth in the case of positive biasing. Thus, the correlation of the crystallographic orientation of grains on the samples with the diamond nucleation behavior was systematically characterized for the case of positive biasing by electron backscattered diffraction method with scanning electron microscopy. Diamond deposition on Ni3Al grains near (111) orientation results in higher nucleation densities, while the densities are low on (110) and (100) oriented grains. Also, the interfacial microstructure between diamond deposited and Ni3Al was characterized by cross-sectional transmission electron microscopy. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectdiamond crystalen_US
dc.subjectnucleationen_US
dc.subjectchemical vapor depositionen_US
dc.subjectinterface characterizationen_US
dc.titleDiamond nucleation on Ni3Al substrate using bias enhanced nucleation methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.diamond.2004.10.005en_US
dc.identifier.journalDIAMOND AND RELATED MATERIALSen_US
dc.citation.volume14en_US
dc.citation.issue2en_US
dc.citation.spage183en_US
dc.citation.epage191en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000227170600008-
dc.citation.woscount2-
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