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dc.contributor.authorWu, Hung-Chien_US
dc.contributor.authorLiu, Tung-Shengen_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.date.accessioned2014-12-08T15:35:08Z-
dc.date.available2014-12-08T15:35:08Z-
dc.date.issued2014en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://hdl.handle.net/11536/23848-
dc.identifier.urihttp://dx.doi.org/10.1149/2.012402jssen_US
dc.description.abstractIn this work, we report that the electrical characteristics of Indium-Gallium-Zinc-Oxide Thin Film Transistors (IGZO-TFTs) can be improved by Mg doping in the IGZO layer. Several composite IGZO/Mg-doped IGZO channel structures were employed. With appropriate Mg-doped IGZO thickness, the electrical properties such as mobility, subthreshold swing (S.S.) and on/off ratio can be significantly improved by Mg doping. Mg doping in IGZO layer can stabilize device performance whatever the device is stressed under positive gate bias or negative gate bias with illumination. By X-ray photoelectron (XPS) analysis, we observe the presence of Mg can change the oxygen bonding states and influence the properties of IGZO layer. The atomic percentage of Mg in the IGZO layer is about 6.53%. As a result, Mg doping is a useful method to enhance the performance and stability of IGZO-TFTs. (C) 2013 The Electrochemical Society. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleEffect of Mg Doping on the Electrical Characteristics of High Performance IGZO Thin Film Transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.012402jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume3en_US
dc.citation.issue2en_US
dc.citation.spageQ24en_US
dc.citation.epageQ27en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000331485600013-
dc.citation.woscount1-
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