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dc.contributor.authorLin, WTen_US
dc.contributor.authorChiou, JCen_US
dc.contributor.authorTsou, Cen_US
dc.date.accessioned2014-12-08T15:35:16Z-
dc.date.available2014-12-08T15:35:16Z-
dc.date.issued2005-02-01en_US
dc.identifier.issn0946-7076en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00542-004-0491-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/23899-
dc.description.abstractA novel method for fabricating a self-aligned electrostatic dual comb drive using a multi-layer SOI process is developed. The present method utilizes four aligned masks, greatly simplify the existing SOI-MEMS fabrication methods in manufacturing optical MEMS devices. Here, the actuating structure consists of fixed combs and moving combs that are composed of single crystal silicon, nitride and polysilicon. One mask is used to provide a deep etching to etch polysilicon, nitride and single crystal silicon respectively. The nitride separates polysilicon and single crystal silicon and provides an additional dielectric for the purpose of producing bi- directional motion upon applying electrostatic forces. A dual comb drive actuator with optical structures was fabricated with the developed process. The actuator is capable of motion 250 nm downward and 480 nm upward with 30 V applied voltage at 4 kHz frequency. The dynamic characteristics of the first and the second resonant frequency of the dual comb-drive actuator are 10.5 kHz and 23 kHz respectively. Experimental results indicated that the measured data agreed well with simulation results using the ANSOFT Maxwell((R)) 2D field simulator, ANSYS((R)) and Coventor Ware((R)).en_US
dc.language.isoen_USen_US
dc.titleA self-aligned fabrication method of dual comb drive using multilayers SOI process for optical MEMS applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s00542-004-0491-3en_US
dc.identifier.journalMICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMSen_US
dc.citation.volume11en_US
dc.citation.issue2-3en_US
dc.citation.spage204en_US
dc.citation.epage209en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:000226664900018-
dc.citation.woscount4-
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