NUMERICAL-SIMULATION OF THE TEMPERATURE-DEPENDENCE OF THE SIDEGATING EFFECT IN GAAS-MESFETS

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DC Field	Value	Language
dc.contributor.author	CHANG, SJ	en_US
dc.contributor.author	LEE, CP	en_US
dc.date.accessioned	2014-12-08T15:03:52Z	-
dc.date.available	2014-12-08T15:03:52Z	-
dc.date.issued	1994-08-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2391	-
dc.description.abstract	The temperature dependence of the sidegating effect in GaAs devices has been investigated by performing two-dimensional numerical simulations on realistic structures. The less sidegating and the higher sidegating threshold at higher temperatures are found to be caused by the temperature-dependent trapping properties of the deep traps and the difference in increase rate with temperature of the currents in various current paths. These results provide further support lo the sidegating picture in which Schottky contacts on the semi-insulating substrate play an important role.	en_US
dc.language.iso	en_US	en_US
dc.title	NUMERICAL-SIMULATION OF THE TEMPERATURE-DEPENDENCE OF THE SIDEGATING EFFECT IN GAAS-MESFETS	en_US
dc.type	Article	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	37	en_US
dc.citation.issue	8	en_US
dc.citation.spage	1557	en_US
dc.citation.epage	1559	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1994NN24900014	-
dc.citation.woscount	0	-
Appears in Collections:	Articles