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dc.contributor.authorLee, Yen-Chien_US
dc.contributor.authorLin, Yong-Hanen_US
dc.contributor.authorWu, Jong-Chingen_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.date.accessioned2014-12-08T15:35:26Z-
dc.date.available2014-12-08T15:35:26Z-
dc.date.issued2014-03-12en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/47/10/105305en_US
dc.identifier.urihttp://hdl.handle.net/11536/23983-
dc.description.abstractWe studied the electron transport properties of micrometre-sized all-Al tunnel junctions (TJs) between 2 and 300 K, in which the AlOx layer grown by O-2 plasma was moderately Ar-ion-milled prior to top electrode deposition. In contrast to the direct tunnelling in the TJs whose barriers are intact (not ion-milled), the zero-bias conductances and the current-voltage characteristics of the TJs as processed are found to be best described by the fluctuation-induced tunnelling conduction mechanism. This observation indicates the formation of nanoscopic incomplete pinholes in the AlOx layer, owing to large junction-barrier interfacial roughness introduced by the ion-milling process. Topographical features revealed by the cross-sectional transmission electron microscopy imaging of the TJ stack conform to this result. This study is of relevance to cases in which ion-milling techniques are applied in tailoring the TJ properties.en_US
dc.language.isoen_USen_US
dc.subjectelectron tunnellingen_US
dc.subjection millingen_US
dc.subjectinterfacial roughnessen_US
dc.titleEffect of ion-milled barriers on electron transport in micrometer-sized tunnel junctionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0022-3727/47/10/105305en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.citation.volume47en_US
dc.citation.issue10en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000332398900024-
dc.citation.woscount0-
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