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dc.contributor.authorChang, Chiao-Yunen_US
dc.contributor.authorLi, Henen_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2014-12-08T15:35:26Z-
dc.date.available2014-12-08T15:35:26Z-
dc.date.issued2014-03-03en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4867023en_US
dc.identifier.urihttp://hdl.handle.net/11536/23991-
dc.description.abstractIn this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20mA and a 27.0% efficiency droop at 100mA (corresponding to a current density of 69A/cm(2)), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs. (C) 2014 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleHigh efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4867023en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume104en_US
dc.citation.issue9en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000332729200011-
dc.citation.woscount3-
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