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dc.contributor.authorHuang, Rongen_US
dc.contributor.authorDing, Hang-Chenen_US
dc.contributor.authorLiang, Wen-Ien_US
dc.contributor.authorGao, Yong-Chaoen_US
dc.contributor.authorTang, Xiao-Dongen_US
dc.contributor.authorHe, Qingen_US
dc.contributor.authorDuan, Chun-Gangen_US
dc.contributor.authorZhu, Ziqiangen_US
dc.contributor.authorChu, Junhaoen_US
dc.contributor.authorFisher, Craig A. J.en_US
dc.contributor.authorHirayama, Tsukasaen_US
dc.contributor.authorIkuhara, Yuichien_US
dc.contributor.authorChu, Ying-Haoen_US
dc.date.accessioned2014-12-08T15:35:37Z-
dc.date.available2014-12-08T15:35:37Z-
dc.date.issued2014-02-01en_US
dc.identifier.issn1616-301Xen_US
dc.identifier.urihttp://dx.doi.org/10.1002/adfm.201301470en_US
dc.identifier.urihttp://hdl.handle.net/11536/24044-
dc.description.abstractComplex oxide heterointerfaces, which play host to an incredible variety of interface physical phenomena, are of great current interest in introducing new functionalities to systems. Here, coherent super-tetragonal BiFeO3/LaAlO3 and rhombohedral BiFeO3/LaAlO3 heterointerfaces are investigated by using a combination of high-angle annular dark-field (HAADF) imaging and annular bright-field (ABF) imaging in a spherical aberration (Cs) corrected scanning transmission electron microscope (STEM), and first-principles calculations. The complicated ferroelectric polarization pinning and relaxation that occurs at both interfaces is revealed with atomic resolution, with a dramatic change in structure of BiFeO3, from cubic to super-tetragonal-like. The results enable a detailed explanation to be given of how non-bulk phase structures are stabilized in thin films of this material.en_US
dc.language.isoen_USen_US
dc.subjectbismuth ferriteen_US
dc.subjectannular bright-field imagingen_US
dc.subjectheterointerfacesen_US
dc.titleAtomic-Scale Visualization of Polarization Pinning and Relaxation at Coherent BiFeO3/LaAlO3 Interfacesen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/adfm.201301470en_US
dc.identifier.journalADVANCED FUNCTIONAL MATERIALSen_US
dc.citation.volume24en_US
dc.citation.issue6en_US
dc.citation.spage793en_US
dc.citation.epage799en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000331953600010-
dc.citation.woscount3-
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