Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Pu, Ying-Chih | en_US |
dc.contributor.author | Hsu, Yung-Jung | en_US |
dc.date.accessioned | 2014-12-08T15:35:38Z | - |
dc.date.available | 2014-12-08T15:35:38Z | - |
dc.date.issued | 2014 | en_US |
dc.identifier.issn | 2040-3364 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/24052 | - |
dc.identifier.uri | http://dx.doi.org/10.1039/c3nr06158b | en_US |
dc.description.abstract | We developed a single-step hot-injection process to synthesize Cd1-xZnxSe quantum dots (QDs) with tunable emission wavelengths. The multiple emission colors of the Cd1-xZnxSe QDs resulted from the variation in their compositions (x value) with the reaction time. Because of the higher reactivity of the Cd precursor, QDs whose composition was rich in CdSe were generated at the beginning of the reaction. As the reaction proceeded, the later-formed ZnSe shell was simultaneously alloyed with the core, giving rise to a progressive alloying treatment for the grown QDs. During the reaction period, the emission color of the Cd1-xZnxSe QDs shifted from red to orange, to yellow, to green and finally to blue. A light emitting diode (LED) composed of multilayers of ITO/poly(3,4-ethylenedioxythiophene): poly-(4-styrenesulfonate)/poly(3-hexylthiophene) blended with Cd1-xZnxSe QDs/Al was fabricated to test the electroluminescence (EL) properties of the QDs. The EL results show high color purity for the emission from LED devices containing Cd1-xZnxSe QDs, revealing that the as-synthesized QDs can be easily processed and integrated into a light-emitting device without using a complicated procedure. The findings from the present work also demonstrate the advantage of using the current single-step synthetic approach to obtain a batch of Cd1-xZnxSe QDs that may emit different colors in prototype LEDs. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Multicolored Cd1-xZnxSe quantum dots with type-I core/shell structure: single-step synthesis and their use as light emitting diodes | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1039/c3nr06158b | en_US |
dc.identifier.journal | NANOSCALE | en_US |
dc.citation.volume | 6 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | 3881 | en_US |
dc.citation.epage | 3888 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000333042500060 | - |
dc.citation.woscount | 1 | - |
Appears in Collections: | Articles |
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