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dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorChang, Jet-Rungen_US
dc.contributor.authorSou, Kuok-Panen_US
dc.contributor.authorLi, Yun-Jingen_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:35:41Z-
dc.date.available2014-12-08T15:35:41Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4673-6476-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/24095-
dc.description.abstractThe radiative and non-radiative lifetime of high In content nanopyramid GaN LEDs are investigated by time resolved and temperature dependent photoluminescent measurement. The radiative recombination efficiency is much improved compared with the conventional c-plane LED.en_US
dc.language.isoen_USen_US
dc.titlePhotoluminescent Study of High Indium Content Nanopyramid Light Emitting Diodesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000334176100308-
Appears in Collections:Conferences Paper


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