Photoluminescent Study of High Indium Content Nanopyramid Light Emitting Diodes

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DC 欄位	值	語言
dc.contributor.author	Chang, Shih-Pang	en_US
dc.contributor.author	Chang, Jet-Rung	en_US
dc.contributor.author	Sou, Kuok-Pan	en_US
dc.contributor.author	Li, Yun-Jing	en_US
dc.contributor.author	Cheng, Yuh-Jen	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Chang, Chun-Yen	en_US
dc.date.accessioned	2014-12-08T15:35:41Z	-
dc.date.available	2014-12-08T15:35:41Z	-
dc.date.issued	2013	en_US
dc.identifier.isbn	978-1-4673-6476-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/24095	-
dc.description.abstract	The radiative and non-radiative lifetime of high In content nanopyramid GaN LEDs are investigated by time resolved and temperature dependent photoluminescent measurement. The radiative recombination efficiency is much improved compared with the conventional c-plane LED.	en_US
dc.language.iso	en_US	en_US
dc.title	Photoluminescent Study of High Indium Content Nanopyramid Light Emitting Diodes	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000334176100308	-
顯示於類別：	會議論文