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dc.contributor.authorKuo, K. Y.en_US
dc.contributor.authorHuang, P. R.en_US
dc.contributor.authorChen, Y. J.en_US
dc.contributor.authorLee, P. T.en_US
dc.date.accessioned2014-12-08T15:35:41Z-
dc.date.available2014-12-08T15:35:41Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4673-6476-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/24100-
dc.description.abstractA gradient Si-rich oxide multilayer deposition structure is proposed to achieve super-high density Si quantum dot (QD) thin film while preserving QD size control ability for better photovoltaic properties.en_US
dc.language.isoen_USen_US
dc.titleSuper-high Density Si Quantum Dot Thin Film for Photovoltaic Properties Enhancementen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000334176100173-
顯示於類別:會議論文