Full metadata record
DC FieldValueLanguage
dc.contributor.authorCHIOU, BSen_US
dc.contributor.authorHSIEH, STen_US
dc.contributor.authorWU, WFen_US
dc.date.accessioned2014-12-08T15:03:53Z-
dc.date.available2014-12-08T15:03:53Z-
dc.date.issued1994-07-01en_US
dc.identifier.issn0002-7820en_US
dc.identifier.urihttp://hdl.handle.net/11536/2410-
dc.description.abstractIndium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (<80-degrees-C) and low rf power (<28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 mum made these sputtered ITO films applicable to infrared mirrors.en_US
dc.language.isoen_USen_US
dc.titleDEPOSITION OF INDIUM TIN OXIDE-FILMS ON ACRYLIC SUBSTRATES BY RADIOFREQUENCY MAGNETRON SPUTTERINGen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE AMERICAN CERAMIC SOCIETYen_US
dc.citation.volume77en_US
dc.citation.issue7en_US
dc.citation.spage1740en_US
dc.citation.epage1744en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994NY39000006-
dc.citation.woscount48-
Appears in Collections:Articles