標題: INFLUENCE OF OXYGEN ON THE PERFORMANCE OF GAAS/ALGAAS QUANTUM-WELL INFRARED PHOTODETECTORS
作者: TSAI, KL
LEE, CP
CHANG, KH
CHEN, HR
TSANG, JS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jul-1994
摘要: The influence of oxygen on the performance of GaAs/AlGaAs quantum well infrared photodetectors (QWIP) has been studied. Photoluminescence and secondary ion mass spectroscopy were used to examine the relationship between the quality of AlGaAs and the oxygen content that were then correlated to the performance of QWIPs. It was found that oxygen is the dominant impurity in the GaAs/AlGaAs superlattice. Because oxygen atoms behave likes electron traps, which effectively reduce the carrier concentration in the material, both of the responsivity and the dark current of QWIP are reduced. The detectivities of QWIPs with lower oxygen concentrations are better than those with higher oxygen concentrations.
URI: http://dx.doi.org/10.1063/1.358439
http://hdl.handle.net/11536/2411
ISSN: 0021-8979
DOI: 10.1063/1.358439
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 76
Issue: 1
起始頁: 274
結束頁: 277
Appears in Collections:Articles