完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChang, Yao-Jenen_US
dc.contributor.authorKo, Cheng-Taen_US
dc.contributor.authorHsiao, Zhi-Chengen_US
dc.contributor.authorChiang, Cheng-Haoen_US
dc.contributor.authorFu, Huan-Chunen_US
dc.contributor.authorYu, Tsung-Hanen_US
dc.contributor.authorFan, Cheng-Hanen_US
dc.contributor.authorLo, Wei-Chungen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2014-12-08T15:35:46Z-
dc.date.available2014-12-08T15:35:46Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4799-0233-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/24159-
dc.description.abstractIn this paper, the wafer-level three-dimensional (3-D) integration scheme using copper TSVs and fine-pitch Cu/Sn-BCB hybrid bonding is designed, fabricated, and completely investigated on electrical characteristics and stability. Key technologies in this 3D integration scheme include high aspect-ratio Cu TSV, fine-pitch Cu/Sn micro-bumps, 250 degrees C low temperature hybrid bonding, wafer thinning and backside RDL formation. The Kelvin and leakage current structures are designed for realization of fundamental electrical properties, and the daisy chain feature is designed for stability evaluation with several reliability tests. All the samples pass the 1000-cycle thermal cycling test, humidity test, and multiple AC current stressing. This scheme shows a significant leakage current improvement after modifying backside process. The stable reliability results and excellent electrical characteristics indicate that the 3D integration scheme has the excellent sealing ability against oxidation and corrosion, and could be potentially applied for future mass production.en_US
dc.language.isoen_USen_US
dc.titleElectrical Investigation and Reliability of 3D Integration Platform using Cu TSVs and Micro-Bumps with Cu/Sn-BCB Hybrid Bondingen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE 63RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC)en_US
dc.citation.spage64en_US
dc.citation.epage70en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000332764900010-
顯示於類別:會議論文