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dc.contributor.authorChiu, Ching-Hsuehen_US
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorLi, Zhen-Yuen_US
dc.contributor.authorChen, Yi-Chenen_US
dc.contributor.authorLing, Shih-Chunen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorLiao, Wei-Tsaien_US
dc.contributor.authorTanikawa, Tomoyukien_US
dc.contributor.authorHonda, Yoshioen_US
dc.contributor.authorYamaguchi, Masahitoen_US
dc.contributor.authorSawaki, Nobuhikoen_US
dc.date.accessioned2014-12-08T15:01:23Z-
dc.date.available2014-12-08T15:01:23Z-
dc.date.issued2011-03-01en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2010.10.054en_US
dc.identifier.urihttp://hdl.handle.net/11536/241-
dc.description.abstractWe present a study of high quality (1 (1) over bar 0 1) GaN films and the InGaN/GaN multiple quantum wells (MQWs) using epitaxial lateral overgrowth (ELO) technique by atmospheric pressure metal organic chemical vapor deposition (MOCVD). The smooth coalescence of the stripes and surface morphology was measured by scanning electron microscope (SEM) and atomic force microscopy (AFM). Due to reduction in internal electric field, semipolar InGaN/GaN MQWs have higher radiative recombination rate from time-resolved photoluminescence (TRPL) measurement. In addition, from degree of polarization (DOP) measurement, we observed higher polarization ratio attributed to the induced anisotropic compressive strain. (C) 2010 Published by Elsevier B.V.en_US
dc.language.isoen_USen_US
dc.subjectMetalorganic chemical vapor depositionen_US
dc.subjectQuantum wellsen_US
dc.subjectNitrideen_US
dc.subjectSemiconductor III-V materialsen_US
dc.subjectLight emitting diodeen_US
dc.titleOptical properties of (1 (1)over-bar 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substratesen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.jcrysgro.2010.10.054en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume318en_US
dc.citation.issue1en_US
dc.citation.spage500en_US
dc.citation.epage504en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000289653900105-
Appears in Collections:Conferences Paper


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