Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chiu, Ching-Hsueh | en_US |
dc.contributor.author | Lin, Da-Wei | en_US |
dc.contributor.author | Lin, Chien-Chung | en_US |
dc.contributor.author | Li, Zhen-Yu | en_US |
dc.contributor.author | Chen, Yi-Chen | en_US |
dc.contributor.author | Ling, Shih-Chun | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Lu, Tien-Chang | en_US |
dc.contributor.author | Wang, Shing-Chung | en_US |
dc.contributor.author | Liao, Wei-Tsai | en_US |
dc.contributor.author | Tanikawa, Tomoyuki | en_US |
dc.contributor.author | Honda, Yoshio | en_US |
dc.contributor.author | Yamaguchi, Masahito | en_US |
dc.contributor.author | Sawaki, Nobuhiko | en_US |
dc.date.accessioned | 2014-12-08T15:01:23Z | - |
dc.date.available | 2014-12-08T15:01:23Z | - |
dc.date.issued | 2011-03-01 | en_US |
dc.identifier.issn | 0022-0248 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.jcrysgro.2010.10.054 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/241 | - |
dc.description.abstract | We present a study of high quality (1 (1) over bar 0 1) GaN films and the InGaN/GaN multiple quantum wells (MQWs) using epitaxial lateral overgrowth (ELO) technique by atmospheric pressure metal organic chemical vapor deposition (MOCVD). The smooth coalescence of the stripes and surface morphology was measured by scanning electron microscope (SEM) and atomic force microscopy (AFM). Due to reduction in internal electric field, semipolar InGaN/GaN MQWs have higher radiative recombination rate from time-resolved photoluminescence (TRPL) measurement. In addition, from degree of polarization (DOP) measurement, we observed higher polarization ratio attributed to the induced anisotropic compressive strain. (C) 2010 Published by Elsevier B.V. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Metalorganic chemical vapor deposition | en_US |
dc.subject | Quantum wells | en_US |
dc.subject | Nitride | en_US |
dc.subject | Semiconductor III-V materials | en_US |
dc.subject | Light emitting diode | en_US |
dc.title | Optical properties of (1 (1)over-bar 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/j.jcrysgro.2010.10.054 | en_US |
dc.identifier.journal | JOURNAL OF CRYSTAL GROWTH | en_US |
dc.citation.volume | 318 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 500 | en_US |
dc.citation.epage | 504 | en_US |
dc.contributor.department | 光電系統研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Institute of Photonic System | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000289653900105 | - |
Appears in Collections: | Conferences Paper |
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