完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liu, Chien-Min | en_US |
dc.contributor.author | Lin, Han-Wen | en_US |
dc.contributor.author | Chu, Yi-Cheng | en_US |
dc.contributor.author | Chen, Chih | en_US |
dc.contributor.author | Lyu, Dian-Rong | en_US |
dc.contributor.author | Chen, Kuan-Neng | en_US |
dc.contributor.author | Tu, K. N. | en_US |
dc.date.accessioned | 2014-12-08T15:35:49Z | - |
dc.date.available | 2014-12-08T15:35:49Z | - |
dc.date.issued | 2014-05-01 | en_US |
dc.identifier.issn | 1359-6462 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.scriptamat.2014.01.040 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/24211 | - |
dc.description.abstract | We achieve low-temperature Cu-to-Cu direct bonding using highly (1 1 1)-orientated Cu films. The bonding temperature can be lowered to 200 degrees C at a stress of 114 psi for 30 min at 10(-3) torr. The temperature is lower than the reflow temperature of 250 degrees C for Pb-free solders. Our breakthrough is based on the finding that the Cu (1 1 1) surface diffusivity is the fastest among all the planes of Cu and the bonding process can occur through surface diffusion creep on the (1 1 1) surfaces. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Cu-to-Cu direct bonding | en_US |
dc.subject | Creep | en_US |
dc.subject | Diffusion | en_US |
dc.subject | Preferred orientation | en_US |
dc.title | Low-temperature direct copper-to-copper bonding enabled by creep on highly (111)-oriented Cu surfaces | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.scriptamat.2014.01.040 | en_US |
dc.identifier.journal | SCRIPTA MATERIALIA | en_US |
dc.citation.volume | 78-79 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 65 | en_US |
dc.citation.epage | 68 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000334138900017 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |