標題: Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory
作者: Hsu, Chung-Wei
Wang, Yu-Fen
Wan, Chia-Chen
Wang, I-Ting
Chou, Chun-Tse
Lai, Wei-Li
Lee, Yao-Jen
Hou, Tuo-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: storage-class memory;resistive-switching random access memory;three-dimensional memory;current conduction mechanism;self rectification
公開日期: 25-四月-2014
摘要: Three-dimensional vertical resistive-switching random access memory (V-RRAM) is the most anticipated candidate for fulfilling the strict requirements of the disruptive storage-class memory technology, including low bit cost, fast access time, low-power nonvolatile storage, and excellent endurance. However, an essential self-selecting resistive-switching cell that satisfies these requirements has yet to be developed. In this study, we developed a TaOx/TiO2 double-layer V-RRAM containing numerous highly desired features, including: (1) a self-rectifying ratio of up to 10(3) with a sub-mu A operating current, (2) little cycle-to-cycle and layer-to-layer variation, (3) a steep vertical sidewall profile for high-density integration, (4) forming-free and self-compliance characteristics for a simple peripheral circuit design, and (5) an extrapolated endurance of over 10(15) cycles at 100 degrees C. Furthermore, the switching and self-rectifying mechanisms were successfully modeled using oxygen ion migration and homogeneous barrier modulation. We also suggest the new possibility of monolithically integrating working and storage memory by exploiting a unique tradeoff between retention time and endurance.
URI: http://dx.doi.org/10.1088/0957-4484/25/16/165202
http://hdl.handle.net/11536/24222
ISSN: 0957-4484
DOI: 10.1088/0957-4484/25/16/165202
期刊: NANOTECHNOLOGY
Volume: 25
Issue: 16
結束頁: 
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