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dc.contributor.authorChiu, Wei-Chihen_US
dc.contributor.authorTsui, Bing-Yueen_US
dc.date.accessioned2014-12-08T15:35:52Z-
dc.date.available2014-12-08T15:35:52Z-
dc.date.issued2014-04-01en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.microre1.2013.12.024en_US
dc.identifier.urihttp://hdl.handle.net/11536/24252-
dc.description.abstractIn this work, we propose two carbon nanotube (CNT) network fabrication processes, the normal spin rate coating (NR) and the slow spin rate coating (SR), and two interconnect structures, the single layer structure (SL) and the double layer structure (DL), to construct CNT-interconnects. We demonstrate and compare the performance of the CNT-interconnects with four kinds of process combinations: NR/SL, NR/DL, SR/SL and SR/DL. Generally, in the midst of these four combinations, the DL samples have higher conductive probabilities and less conductance variations, while SL/SR samples have the higher average conductance under the same amount of the CNT solution for CNT network formation. In addition, the phase transition phenomena occurred in the size dependent average conductance of CNT-interconnects are characterized and investigated by percolation theory. With the elongation of CNT-interconnects, the relationships between the average conductance and the square number would shift from linear region, power region to percolation region. Moreover, the results show that the resistance from the additional layer of Al2O3 in the double layer interconnect structure would influence the phase transition in the conductance of CNT-interconnects as well. (C) 2013 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleHigh performance of CNT-interconnects by the multi-layer structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.microre1.2013.12.024en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.citation.volume54en_US
dc.citation.issue4en_US
dc.citation.spage778en_US
dc.citation.epage784en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000335283100012-
dc.citation.woscount0-
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